IXTC13N50

Single FETs, MOSFETs Overview

The IXTC13N50 is a silicon N-Channel Enhancement Mode Power MOSFET from the HDMOSTM family, rated for a drain-source breakdown voltage of 500 V. It features a continuous drain current (ID25) of 12 A at 25°C case temperature and a maximum on-state resistance (RDS(on)) of 0.4 Ω at VGS = 10 V. The device utilizes an ISOPLUS220 package with an electrically isolated back surface, providing 2500 V isolation capability. Key electrical parameters include a gate threshold voltage of 2 to 4 V, a total gate charge of 110 to 120 nC, and a power dissipation rating of 140 W at 25°C.

Single FETs, MOSFETs Feature Summary

• Features an electrically isolated mounting surface via Direct-Copper-Bond substrate technology, eliminating the need for screws or isolation foils during assembly.
• Incorporates rugged polysilicon gate cell structure and is rated for Unclamped Inductive Switching (UIS) events.
• Designed for high dv/dt performance and low reverse recovery time (trr) characteristics within the HDMOSTM family.

Single FETs, MOSFETs Applications

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control

Single FETs, MOSFETs Procurement Notes

Verify component status before procurement as the datasheet explicitly marks the IXTC13N50 as OBSOLETE. Confirm availability through authorized distributors or secondary markets. Ensure that replacement components meet identical electrical specifications and thermal requirements. Validate package compatibility and pinout alignment if substituting with newer series devices.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high power density and space savings due to its compact ISOPLUS220 footprint. Consider the 0.4 Ω RDS(on) and 12 A current rating for moderate power switching tasks. Evaluate the 2500 V isolation benefit if galvanic separation between the heatsink and circuit ground is required without additional insulating materials.

Single FETs, MOSFETs Part Context

The IXTC13N50 belongs to the IXYS HDMOSTM family of high dv/dt Power MOSFETs. It is designed using silicon chip technology on a Direct-Copper-Bond substrate to achieve high power dissipation capabilities. The device is part of a broader portfolio of isolated power transistors intended for robust industrial and consumer power electronics environments.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As the component is marked obsolete, consult manufacturer archives for direct replacements or evaluate equivalent models from other vendors based on matching 500V/12A/ISOPLUS220 specifications.