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IXTC180N085T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 85V 110A ISOPLUS220. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXTC180N085T
- Description：MOSFET N-CH 85V 110A ISOPLUS220
- Series：-
- Mfr：IXYS
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：85 V
- Current - Continuous Drain (Id) @ 25°C：110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：6.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：170 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8800 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：150W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：ISOPLUS220™
- Package / Case：ISOPLUS220™
Single FETs, MOSFETs datasheet and documents for IXTC180N085T
Single FETs, MOSFETs Overview
The IXTC180N085T is an N-Channel Enhancement Mode Power MOSFET manufactured by IXYS. It features a Fast Intrinsic Rectifier and is rated for avalanche operation. The device utilizes silicon technology and is housed in a TO-263AB (D2PAK) surface-mount package with three pins. It is designed for high-current applications requiring robust switching performance.
Single FETs, MOSFETs Feature Summary
- N-Channel Enhancement Mode configuration
- Integrated Fast Intrinsic Rectifier
- Avalanche Rated capability
Single FETs, MOSFETs Applications
- High-power switching circuits
- DC-DC converter topologies
- Motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the exact datasheet specifications directly from the manufacturer or authorized distributor before integration. Confirm that the TO-263AB package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specific power dissipation levels expected in your application design.
Single FETs, MOSFETs Selection Notes
Select this component when an N-Channel MOSFET with integrated rectification and avalanche ruggedness is required. Compare against similar IXYS models like the IXTH180N085T for pin compatibility and electrical parameter alignment. Validate that the enhancement mode gate drive characteristics suit your controller output capabilities.
Single FETs, MOSFETs Part Context
This part belongs to the IXYS discrete power semiconductor portfolio, specifically within the MOSFET category. It represents a solution for medium-voltage, high-current switching applications where reliability under transient conditions is critical. The TO-263AB package facilitates efficient heat transfer through the drain pad.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes such as the IXTH180N085T. Verify that any replacement maintains identical pinout, voltage ratings, and current handling capabilities to ensure circuit compatibility without redesign.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
