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IXTH02N250 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 2500V 200MA TO247. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXTH02N250
- Description：MOSFET N-CH 2500V 200MA TO247
- Series：-
- Mfr：Littelfuse Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：2500 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：450Ohm @ 50mA, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：116 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247 (IXTH)
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for IXTH02N250
Single FETs, MOSFETs Overview
The IXTH02N250 is an N-channel enhancement mode power MOSFET from the IXYS high-voltage series, rated for a drain-source voltage of 2500 V. It features a maximum continuous drain current of 200 mA at 25°C case temperature and a low on-state resistance of 450 Ω. The device incorporates a fast intrinsic diode with a reverse recovery time of 1.5 µs and operates within a junction temperature range of -55°C to +150°C. Packaged in a TO-247 leaded format, it offers low package inductance and is designed for robust switching applications.
Single FETs, MOSFETs Feature Summary
- High voltage capability up to 2500 V for demanding power circuits
- Fast intrinsic body diode for efficient switching performance
- Low package inductance design for reduced electromagnetic interference
- Robust thermal management with wide operating temperature range
Single FETs, MOSFETs Applications
- High voltage power supplies
- Capacitor discharge systems
- Pulse circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant (TO-247) matches your board layout requirements. Confirm that the 2500 V rating and 200 mA current limit align with your circuit's peak stress conditions. Ensure proper heatsinking is utilized given the thermal characteristics. Check for any updated datasheet revisions or pinout changes before finalizing the design integration.
Single FETs, MOSFETs Selection Notes
Select this component when high voltage isolation is required alongside moderate current handling. The TO-247 package facilitates easy mounting and effective heat dissipation compared to surface-mount alternatives. Consider the 450 Ω on-resistance impact on power loss during conduction. Evaluate the fast intrinsic diode speed against your specific switching frequency needs.
Single FETs, MOSFETs Part Context
This part belongs to the IXYS high-voltage MOSFET family, which includes variants like IXTA02N250 and IXTV02N250S. These devices share similar electrical specifications but differ in packaging styles such as TO-263 and PLUS220 SMD. The family is engineered for compact, space-saving designs in industrial and commercial power electronics.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include IXTA02N250 and IXTV02N250S, which offer identical electrical ratings. Verify pin compatibility and thermal resistance values when swapping between TO-247, TO-263, and PLUS220 packages.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
