IXTQ220N075T

Single FETs, MOSFETs Overview

The IXTQ220N075T is a single N-channel silicon power MOSFET from the IXYS HiperFET family, designed for high-current switching applications. It features a TO-3P through-hole package with a drain-connected case. Key electrical parameters include a 75V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 220A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 4.5mΩ at 10V gate drive. Additional specifications include a gate charge (Qg) of 165nC, an input capacitance of 7700pF, and a power dissipation rating of 480W at case temperature. The operating junction temperature range extends from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• High current handling capability with 220A continuous drain current rating
• Low conduction losses achieved through minimized on-state resistance
• Robust thermal management via metal tab construction in TO-3P package
• Enhanced mode operation suitable for direct logic or driver interface

Single FETs, MOSFETs Applications

• Motor control systems requiring high current switching
• DC-DC converter topologies for industrial power supplies
• Inverter circuits in renewable energy systems
• High-power audio amplifier output stages

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches the required TO-3P footprint. Ensure storage conditions comply with moisture sensitivity levels if applicable. Review revision history for any parameter updates. Validate supplier authorization status before purchase.

Single FETs, MOSFETs Selection Notes

Select this component when high current capacity and low on-resistance are critical for efficiency. Consider the TO-3P package constraints regarding mounting space and thermal interface requirements. Evaluate gate drive capabilities to ensure sufficient voltage for optimal Rds(on) performance. Assess thermal design needs based on the specified power dissipation ratings under expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiperFET series, known for optimized trade-offs between on-resistance and gate charge. The TO-3P package provides superior thermal conductivity compared to plastic packages, making it suitable for high-power discrete applications. The N-channel configuration allows for efficient low-side switching in various power electronics designs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 75V 220A N-channel MOSFETs in TO-3P packages from compatible manufacturers. Verify pinout compatibility and thermal characteristics before substitution. Check for equivalent or improved Rds(on) and Qg values to maintain circuit performance. Ensure voltage and current ratings meet or exceed original design requirements.