IXXN110N65B4H1

Overview

The IXXN110N65B4H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Trench and XPT technology to achieve high efficiency in power switching applications. The device features a collector-emitter breakdown voltage of 650 V and a continuous collector current rating of 110 A at 25°C. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247-3 through-hole package with a maximum power dissipation of 880 W.

Feature Summary

• Incorporates IXYS GenX4 Trench IGBT technology for optimized switching performance.
• Utilizes XPT (eXtended Plateau Technology) to enhance short-circuit ruggedness and reduce tail current.
• Designed for low conduction losses via optimized saturation voltage characteristics.

Applications

• High-frequency power supplies
• Motor drive inverters
• Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal specifications. Ensure that the procurement channel provides original manufacturer documentation to validate authenticity. Cross-reference the component marking with the official part number to prevent substitution errors during assembly.

Selection Notes

Select this component for designs requiring robust performance at 650 V with moderate current handling capabilities. Evaluate the thermal resistance parameters to ensure adequate heat sinking for the specified power dissipation limits. Confirm that the gate drive requirements align with the standard IGBT control voltages for reliable operation in industrial environments.

Part Context

This component belongs to the IXYS IXX series, which integrates Trench and XPT technologies. These devices are engineered for high reliability in medium-power applications. The series offers improved switching speed and reduced energy losses compared to previous generations, making it suitable for modern efficient power conversion systems.

Replacement Considerations

Consult the official IXYS replacement guide for direct equivalents. Verify electrical parameters such as Vceo, Ic, and package dimensions before substituting with other manufacturers' parts to ensure mechanical and thermal compatibility.