IXXT100N75B4HV

Overview

The IXXT100N75B4HV is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Trench and XPT technology to achieve high efficiency in power switching applications. The device features a collector-emitter voltage rating of 750 V and a continuous collector current capacity of 100 A at 25°C. Packaged in the TO-268HV form factor, it supports surface mount installation. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.3 V and a power dissipation rating of 500 W. The component operates within a junction temperature range of -55°C to +175°C.

Feature Summary

• Integrates Trench gate architecture with XPT (eXtreme Punch Through) technology for optimized trade-offs between conduction losses and switching performance.
• Designed with a robust TO-268HV package structure to withstand high thermal stress and mechanical strain in demanding power electronics environments.
• Provides enhanced short-circuit capability and ruggedness suitable for hard-switching applications requiring high reliability.

Applications

• High-frequency induction heating systems
• Uninterruptible Power Supply (UPS) inverters
• Switched-mode power supplies (SMPS)

Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with the manufacturer or authorized distributors before procurement. Confirm that the TO-268HV package dimensions align with your PCB footprint requirements. Ensure thermal management solutions are designed to handle the specified 500 W power dissipation limits under actual operating conditions. Check for RoHS compliance status and any recent product change notifications that may affect availability or specifications.

Selection Notes

Select this component when designing circuits requiring a 750 V blocking voltage with moderate current handling capabilities around 100 A. The TO-268HV package is appropriate for surface-mount designs where higher thermal conductivity than standard TO-263 packages is needed. Consider the 2.3 V saturation voltage for conduction loss calculations and ensure the gate drive circuitry supports the required voltage levels for optimal switching performance.

Part Context

This IGBT belongs to IXYS's discrete power transistor lineup, specifically engineered for medium-power industrial applications. The TO-268HV series represents a high-voltage variant designed to offer superior thermal performance compared to standard surface-mount packages. It serves as a critical switching element in converters and inverters where space constraints and thermal efficiency are primary design drivers.

Replacement Considerations

Direct substitutes must match the 750 V rating, 100 A current capacity, and TO-268HV package. Verify pinout compatibility and thermal resistance characteristics. Cross-reference with other IXYS IXXT series devices or equivalent offerings from manufacturers like Infineon or Mitsubishi that utilize similar Trench/XPT technologies for comparable performance metrics.