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The IXYN120N65C3D1 is an N-channel enhancement mode MOSFET from the IXYS X2-Class series. It features a maximum drain-source voltage of 650 V and a continuous drain current of 120 A. The device utilizes PLUS247 through-hole packaging with three pins. Key electrical parameters include a maximum drain-source resistance of 23 mΩ, a forward voltage of 1.4 V, and typical gate charge of 230 nC at specified Vgs. Power dissipation reaches 1.25 kW, operating within a temperature range of -55°C to 150°C.
Verify component authenticity against official IXYS documentation before integration. Confirm that the PLUS247 package dimensions match PCB layout requirements. Ensure thermal management solutions support the 1.25 kW dissipation rating under actual operating conditions. Check for specific ordering suffixes if variant functionality is required.
Select this component when high voltage isolation and substantial current capacity are required in a single through-hole package. The 650 V rating suits medium-voltage industrial applications. Consider the 23 mΩ resistance for efficiency calculations. Evaluate thermal constraints given the high power dissipation potential.
This MOSFET belongs to the IXYS X2-Class series, designed for robust performance in demanding power electronics environments. The PLUS247 package provides mechanical stability for through-hole mounting. It serves as a discrete solution for high-power switching tasks where integrated modules may be excessive.
Public confirmed substitute part numbers: None identified.