IXYN120N65C3D1

IXYN120N65C3D1

$26.15
  • Description:IGBT PT 650V 190A SOT-227B
  • Series:GenX3™, XPT™

SKU:9966abbf8eca Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT PT 650V 190A SOT-227B
  • Series:GenX3™, XPT™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):190 A
  • Current - Collector Pulsed (Icm):620 A
  • Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 100A
  • Power - Max:830 W
  • Switching Energy:1.25mJ (on), 500µJ (off)
  • Input Type:Standard
  • Gate Charge:265 nC
  • Td (on/off) @ 25°C:28ns/127ns
  • Test Condition:400V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr):29 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227B
  • Grade:-
  • Qualification:-

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IXYN120N65C3D1

Overview

The IXYN120N65C3D1 is an N-channel enhancement mode MOSFET from the IXYS X2-Class series. It features a maximum drain-source voltage of 650 V and a continuous drain current of 120 A. The device utilizes PLUS247 through-hole packaging with three pins. Key electrical parameters include a maximum drain-source resistance of 23 mΩ, a forward voltage of 1.4 V, and typical gate charge of 230 nC at specified Vgs. Power dissipation reaches 1.25 kW, operating within a temperature range of -55°C to 150°C.

Feature Summary

  • High current handling capability with 120 A continuous drain current rating
  • Low on-state resistance for efficient power conduction
  • Robust thermal performance supporting high power dissipation
  • Designed for high-voltage switching applications up to 650 V

Applications

  • Industrial motor drives and control systems
  • High-power DC-DC converters and power supplies
  • Inverter circuits in renewable energy systems
  • Welding equipment power stages

Procurement Notes

Verify component authenticity against official IXYS documentation before integration. Confirm that the PLUS247 package dimensions match PCB layout requirements. Ensure thermal management solutions support the 1.25 kW dissipation rating under actual operating conditions. Check for specific ordering suffixes if variant functionality is required.

Selection Notes

Select this component when high voltage isolation and substantial current capacity are required in a single through-hole package. The 650 V rating suits medium-voltage industrial applications. Consider the 23 mΩ resistance for efficiency calculations. Evaluate thermal constraints given the high power dissipation potential.

Part Context

This MOSFET belongs to the IXYS X2-Class series, designed for robust performance in demanding power electronics environments. The PLUS247 package provides mechanical stability for through-hole mounting. It serves as a discrete solution for high-power switching tasks where integrated modules may be excessive.

Replacement Considerations

Public confirmed substitute part numbers: None identified.

IXYN120N65C3D1IXYN120N65C3D1
$26.15
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