IXYN80N90C3H1

Overview

The IXYS IXYN80N90C3H1 is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the GenX3 and XPT product families. It features a maximum collector-emitter voltage of 900 V and a continuous collector current of 80 A at 25°C. The device utilizes a PLUS247 through-hole package with three pins, supporting a maximum power dissipation of 1150 W. It operates within a junction temperature range of -55°C to +175°C and includes an integrated anti-parallel diode for inductive load switching applications.

Feature Summary

• Utilizes XPT technology to optimize the trade-off between low saturation voltage and fast switching performance.
• Incorporates GenX3 structure for improved ruggedness and reduced gate charge compared to previous generations.
• Features an integrated fast recovery anti-parallel diode suitable for hard-switching topologies.

Applications

• High-frequency motor drives and industrial inverters
• Uninterruptible Power Supply (UPS) systems
• Switch-mode power supplies and DC-DC converters

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheets. Confirm the specific suffix 'H1' corresponds to the required RoHS compliance and packaging configuration. Request batch traceability documentation to ensure material consistency. Validate that the supplier provides genuine factory-sealed units to prevent counterfeit risks.

Selection Notes

Select this component when designing circuits requiring 900V blocking capability with moderate current handling up to 80A. The PLUS247 package facilitates efficient thermal management via direct mounting to heatsinks. Ensure the gate drive circuit supports the specified ±20V limit and accounts for the total gate charge requirements for optimal switching speed.

Part Context

This part belongs to IXYS's 900V IGBT portfolio, positioned alongside similar ratings like the IXYB series. It serves as a discrete solution for medium-power conversion tasks where module integration is unnecessary. The XPT technology distinguishes it from standard planar devices by offering lower conduction losses while maintaining acceptable switching speeds.

Replacement Considerations

Direct pin-compatible substitutes within the same voltage and current class should be evaluated based on Vce(sat) and switching energy differences. Verify that any alternative device maintains the same PLUS247 footprint and thermal characteristics to avoid PCB redesign.