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Product Detailed Parameters
- Description：DISC IGBT XPT-GENX3 TO-220AB/FP
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：105 A
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：200 W
- Switching Energy：-
- Input Type：-
- Gate Charge：30 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：135 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The IXYS IXYP20N65C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Silicon technology. It features a TO-263AA-3 (D2PAK-3) surface-mount package designed for high-power switching applications. The device supports a maximum collector-emitter voltage of 650 V and operates with a continuous collector current of 20 A at 25°C, extending to 50 A under specific thermal conditions. Key electrical parameters include a collector-emitter saturation voltage of 2.27 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 230 W. The component functions within an operating temperature range from -55°C to +175°C junction temperature.
Feature Summary
- Utilizes XPT (Extra Punch Through) technology to optimize the trade-off between low conduction losses and fast switching performance.
- Features a robust D2PAK-3 surface-mount package structure engineered for efficient thermal management in compact designs.
- Incorporates a soft-recovery integrated anti-parallel diode to minimize switching losses and electromagnetic interference during commutation.
Applications
- High-frequency switch-mode power supplies and industrial motor drives
- Uninterruptible power supply (UPS) systems and inverter circuits
- Resonant converter topologies requiring low switching energy
Procurement Notes
Verify the specific suffix designation against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure that the procurement source provides valid traceability documentation for the silicon material grade. Confirm that the component meets relevant environmental compliance standards required for the target assembly process before finalizing orders.
Selection Notes
Select this component when a balance between moderate current handling and low saturation voltage is required in a surface-mount form factor. Evaluate the thermal resistance characteristics against the system's heat sinking capabilities to ensure the junction temperature remains within the specified 175°C limit during peak load operations.
Part Context
This IGBT belongs to the IXYS C3 series, which integrates optimized trench gate technology with punch-through design principles. The series targets efficiency improvements in medium-power conversion stages compared to earlier generation planar devices.
Replacement Considerations
Direct cross-compatibility with other manufacturers' parts requires verification of pinout alignment and exact electrical parameter matching. Review datasheets for equivalent packages such as TO-263 variants to ensure mechanical fit and thermal interface compatibility without altering circuit board layout constraints.
