IXYP20N65C3D1M

Overview

The IXYP20N65C3D1M is a single N-channel silicon IGBT transistor manufactured by IXYS. It utilizes XPT technology and belongs to the IXYP20N65 series, housed in a TO-220-3 through-hole package. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 18 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.27 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 50 W. It operates within a temperature range of -55°C to +175°C junction temperature.

Feature Summary

• Utilizes IXYS XPT (eXtended Plateau Technology) for optimized switching performance.
• Designed for high-voltage applications with a 650 V blocking capability.
• Features a standard TO-220-3 through-hole package for reliable mounting.

Applications

• High-frequency switch-mode power supplies
• Motor control circuits
• Inverter systems

Procurement Notes

Verify component authenticity against manufacturer specifications before integration. Confirm that the TO-220-3 package dimensions match the target PCB footprint. Ensure thermal management solutions accommodate the 50 W power dissipation rating under expected operating conditions. Check for RoHS compliance documentation if required by local regulations.

Selection Notes

Select this component when a 650 V rated IGBT with moderate current handling is required in a through-hole configuration. Compare the 2.27 V saturation voltage against alternative devices to evaluate conduction losses. Consider the 18 A continuous current limit relative to peak load requirements. Verify compatibility with standard gate drive voltages given the specified leakage characteristics.

Part Context

This part belongs to the IXYS IXYP20N65 series, which focuses on XPT technology for improved efficiency. It shares the 650 V voltage class with other IXYS IGBTs but differs in packaging and current ratings compared to higher-power variants like the IXYH or IXYA series. The TO-220-3 package distinguishes it from surface-mount options.

Replacement Considerations

Direct substitutes must match the 650 V rating, TO-220-3 package, and similar saturation voltage. Cross-reference with other IXYS XPT series parts or equivalent offerings from manufacturers providing comparable through-hole IGBTs with identical pinouts and thermal profiles.