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JAN1N5312-1 is listed in the Current Regulation - Diodes, Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE CUR REG 100V 4.29MA 500MW. Review the specifications below when checking this part for your BOM.
The JAN1N5312-1 is a current regulator diode manufactured by Microchip Technology, designed for through-hole mounting in the DO-7 (DO-204AA) axial package. It provides a regulated current of 4.29 mA with a maximum voltage rating of 100 V and a power dissipation capacity of 500 mW. The device operates within an extended temperature range from -65°C to +175°C junction temperature. This component meets MIL-PRF-19500/463 qualification standards, ensuring reliability for military and aerospace applications requiring stable current regulation.
Verify that the specific part number includes the mandatory suffix indicating the correct packaging configuration and lead time requirements. Confirm compliance with the relevant military specification standards required for your procurement contract. Ensure the supplier provides traceability documentation consistent with defense industry regulations.
Select this component when a fixed current source is needed for biasing or protection in harsh environments. Compare the 4.29 mA regulation point against circuit requirements to ensure compatibility. Verify that the 100 V breakdown voltage exceeds the maximum expected voltage drop across the load during operation.
This part belongs to the JAN series of current regulator diodes produced by Microchip Technology. These devices are engineered to replace older discrete transistor configurations with a single, compact solution. The JAN prefix indicates adherence to strict military quality standards, distinguishing it from commercial variants.
Check for parametric equivalents such as the standard 1N5312 if military qualification is not required. Verify pinout compatibility and thermal characteristics before substituting with other axial current regulator diodes.
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