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Product Detailed Parameters
- Description：TRANS 2NPN 60V 500MA TO-78-6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：500mA
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
- Power - Max：2.12W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-78-6 Metal Can
- Supplier Device Package：TO-78-6
- Grade：Military
- Qualification：MIL-PRF-19500/270
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Overview
The JAN2N2060L is a dual NPN silicon small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a hermetically sealed metal TO-78-6 package designed for high-reliability applications. The device supports a maximum collector current of 500 mA and operates with a collector-emitter voltage of 60 V, a collector-base voltage of 100 V, and an emitter-base voltage of 7 V. Power dissipation reaches 2.12 W, with a saturation voltage of 300 mV. DC current gain ranges from a minimum of 25 at 10 uA to a maximum of 150 at 10 mA. Operating temperatures span from -65 C to +200 C.
Feature Summary
- Dual NPN configuration within a single hermetically sealed metal package
- High thermal stability supporting operation up to 200 C
- Suitable for high-reliability military and aerospace environments
Applications
- Military-grade analog signal processing circuits
- Aerospace power regulation systems
- High-reliability switching applications in harsh environments
Procurement Notes
Verify the specific revision level and lot traceability when sourcing this component, as military-grade parts often require strict adherence to quality standards. Confirm that the TO-78-6 package dimensions match your board layout constraints. Ensure that the supplier provides necessary documentation regarding hermetic seal integrity and material composition for compliance purposes.
Selection Notes
Select the JAN2N2060L when a dual NPN configuration is required in a radiation-hardened or high-vibration environment. Compare its 500 mA current capability against standard commercial alternatives if space is limited. Consider the TO-78-6 package size relative to available mounting areas on the PCB.
Part Context
This component belongs to the 2N2060 series of dual NPN transistors produced by Microchip Technology. It serves as a specialized variant designed for demanding operational conditions where standard plastic packages would fail. The series is characterized by its robust metal construction and high-temperature tolerance.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided data.
