JAN2N2919L

Overview

The JAN2N2919L is a dual NPN bipolar junction transistor (BJT) array manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-78-6 metal can package designed for through-hole mounting. The device features a collector-emitter breakdown voltage of 60V and a maximum collector current of 30mA. Power dissipation is rated at 350mW, with a DC current gain minimum of 150 at 1mA and 5V. The component supports a maximum junction temperature of 200°C and holds MIL-PRF-19500/355 qualification.

Feature Summary

• Dual NPN configuration within a single metal can package
• High voltage tolerance suitable for power amplification circuits
• Qualified to military reliability standards

Applications

• Power amplification circuits
• Audio amplifier designs requiring low noise operation
• Military-grade electronic systems

Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to ensure compliance with required environmental or screening levels. Confirm that the TO-78-6 metal can package matches the intended thermal and mechanical constraints of the target application design.

Selection Notes

Select this component when a dual NPN BJT array is required with high voltage capability and military reliability. Ensure the circuit design accommodates the 30mA current limit and 350mW power dissipation. Verify that the through-hole mounting style fits the PCB layout requirements.

Part Context

This part belongs to the family of dual NPN bipolar transistors offered by Microchip Technology. It serves as a specialized alternative to standard discrete pairs, providing matched characteristics within a compact metal can package. The series targets applications demanding robust performance under strict operational conditions.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.