JAN2N2920

JAN2N2920

$25.46
  • Description:TRANS 2NPN 60V 30MA TO-78-6
  • Series:-

SKU:6582387444f9 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 60V 30MA TO-78-6
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):30mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 1mA, 5V
  • Power - Max:350mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-78-6 Metal Can
  • Supplier Device Package:TO-78-6
  • Grade:Military
  • Qualification:MIL-PRF-19500/355

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JAN2N2920

Overview

The JAN2N2920 is a single NPN silicon epitaxial planar transistor manufactured by Microchip Technology. It utilizes a hermetically sealed TO-5 metal can package designed for high-reliability applications. The device supports a maximum collector-emitter voltage of 60 V and a collector-base voltage of 70 V, with an emitter-base breakdown voltage of 6 V. It handles a continuous collector current of 30 mA and dissipates up to 350 mW of power. The component operates within a junction temperature range of -65°C to +200°C and features a DC current gain (hFE) ranging from 175 to 600.

Feature Summary

  • Hermetically sealed TO-5 metal can construction ensures environmental protection and long-term reliability in harsh conditions.
  • Epitaxial planar silicon technology provides stable electrical characteristics and robust performance across extreme temperature ranges.
  • High DC current gain specification allows for efficient signal amplification and switching operations in low-power circuits.

Applications

  • Military aerospace electronic systems requiring radiation tolerance and high reliability
  • Aviation communication equipment and navigation subsystems
  • Spacecraft telemetry and control circuitry

Procurement Notes

Verify the specific suffix designation on the datasheet, as variants such as JAN2N2920U or JANTXV2N2920 may exist with different packaging or qualification levels. Confirm that the procurement source provides valid military lot traceability and certification documents. Ensure the component meets the required MIL-PRF-19500 standards for the intended application environment.

Selection Notes

Select this component when a hermetically sealed NPN transistor with a TO-5 package is required for high-reliability environments. Compare the 30 mA collector current limit against circuit demands to ensure adequate headroom. Verify that the 60 V collector-emitter voltage rating exceeds the maximum operating voltage in the design. Consider thermal management requirements given the 350 mW power dissipation capability in free air.

Part Context

The JAN2N2920 belongs to the JAN series of devices produced under MIL-PRF-19500 specifications. This series represents qualified military-grade discrete semiconductors known for strict manufacturing controls. The part serves as a fundamental active element in analog and digital logic circuits where standard commercial components would fail due to environmental stress or longevity requirements.

Replacement Considerations

Direct replacements must match the TO-5 package and NPN polarity. Check equivalent military parts like the 2N2920 if JAN prefix availability is limited. Verify that substitute components meet the same hFE range and voltage ratings to maintain circuit performance without redesign.

JAN2N2920JAN2N2920
$25.46
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