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Product Detailed Parameters
- Description：TRANS 2NPN DUAL 60V 30MA U
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：30mA
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：300 @ 1mA, 5V
- Power - Max：350mW
- Frequency - Transition：-
- Operating Temperature：200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：U
- Grade：Military
- Qualification：MIL-PRF-19500/355
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Overview
The JAN2N2920U is a dual NPN bipolar junction transistor (BJT) array manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 60V and a continuous collector current of 50mA. The device dissipates up to 350mW of power and operates within a junction temperature range of -65°C to +200°C. Packaged in a TO-78-6 metal can for through-hole mounting, it meets MIL-PRF-19500/355 military qualification standards. Key electrical characteristics include a DC current gain of at least 300 at 1mA and 5V, with a saturation voltage of 300mV at specified low currents.
Feature Summary
- Military-grade reliability compliant with MIL-PRF-19500/355 specifications
- Dual NPN configuration integrated into a single TO-78-6 metal can package
- Extended high-temperature operation capability up to 200°C junction temperature
Applications
- High-reliability aerospace and defense electronic systems
- Harsh environment signal processing circuits requiring wide thermal tolerance
- Military-grade switching and amplification applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact performance grades and testing requirements. Ensure procurement channels are authorized to guarantee component authenticity and traceability for critical military or aerospace deployments.
Selection Notes
Select this component when a dual NPN topology is required in a hermetic metal package. Consider the 60V breakdown and 50mA current limits for circuit design. Verify that the TO-78-6 footprint matches the target PCB layout and that the high-temperature rating aligns with the operational environment.
Part Context
This part belongs to the 2N2920 family of dual NPN transistors produced under military quality standards. It serves as a ruggedized alternative to commercial equivalents, offering enhanced durability and consistent performance parameters defined by the MIL-PRF-19500/355 specification for space-constrained, high-reliability designs.
Replacement Considerations
Consult the official Microchip datasheet for verified equivalent part numbers. Substitutions must match the TO-78-6 package, dual NPN configuration, and military qualification level to ensure functional compatibility.
