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The JAN2N3810U/TR is a dual PNP small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in an LCC-6 surface-mount package. The device supports a maximum DC collector current of 50 mA with a power dissipation rating of 350 mW. Key voltage specifications include a collector-emitter breakdown voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. The component operates within a temperature range of -65°C to +200°C.
Verify the specific ordering suffix and manufacturer lot traceability upon purchase. Confirm that the delivered units meet the required military qualification standards specified in the datasheet. Ensure proper handling procedures are followed during storage and assembly to maintain component integrity.
Select this component when a dual PNP configuration is required in a surface-mount format. Consider the 60 V voltage ratings and 50 mA current limits against circuit requirements. Evaluate the LCC-6 package dimensions for PCB layout compatibility and verify thermal management capabilities for the intended operating environment.
This part belongs to the 2N3810 series of dual PNP transistors produced by Microchip Technology. It represents a specialized variant designed for high-reliability applications, distinct from commercial equivalents through its rigorous manufacturing controls and environmental testing protocols defined by the manufacturer.
JAN2N3810U
The maximum operating temperature is +200°C.
It uses an LCC-6 surface-mount package.
The collector-emitter breakdown voltage is 60 V.