JAN2N3810U/TR

JAN2N3810U/TR

$27.00
  • Description:TRANS 2PNP 60V 50MA TO-78-6
  • Series:-

SKU:6ee6252001a4 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP 60V 50MA TO-78-6
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):50mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 1mA, 5V
  • Power - Max:350mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-78-6 Metal Can
  • Supplier Device Package:TO-78-6
  • Grade:Military
  • Qualification:MIL-PRF-19500/336

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JAN2N3810U/TR

Overview

The JAN2N3810U/TR is a dual PNP small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in an LCC-6 surface-mount package. The device supports a maximum DC collector current of 50 mA with a power dissipation rating of 350 mW. Key voltage specifications include a collector-emitter breakdown voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. The component operates within a temperature range of -65°C to +200°C.

Feature Summary

  • Dual PNP configuration integrated into a single compact surface-mount package
  • High thermal stability supporting operation up to +200°C junction temperature
  • Silicon construction designed for reliable performance in harsh environments

Applications

  • Military aerospace electronic systems requiring radiation-hardened components
  • High-reliability signal processing circuits operating at elevated temperatures
  • Spacecraft avionics and satellite communication subsystems

Procurement Notes

Verify the specific ordering suffix and manufacturer lot traceability upon purchase. Confirm that the delivered units meet the required military qualification standards specified in the datasheet. Ensure proper handling procedures are followed during storage and assembly to maintain component integrity.

Selection Notes

Select this component when a dual PNP configuration is required in a surface-mount format. Consider the 60 V voltage ratings and 50 mA current limits against circuit requirements. Evaluate the LCC-6 package dimensions for PCB layout compatibility and verify thermal management capabilities for the intended operating environment.

Part Context

This part belongs to the 2N3810 series of dual PNP transistors produced by Microchip Technology. It represents a specialized variant designed for high-reliability applications, distinct from commercial equivalents through its rigorous manufacturing controls and environmental testing protocols defined by the manufacturer.

Replacement Considerations

JAN2N3810U

FAQ

What is the maximum operating temperature for the JAN2N3810U/TR?

The maximum operating temperature is +200°C.

Does the JAN2N3810U/TR use through-hole or surface-mount packaging?

It uses an LCC-6 surface-mount package.

What is the collector-emitter breakdown voltage (VCEO)?

The collector-emitter breakdown voltage is 60 V.

JAN2N3810U/TRJAN2N3810U/TR
$27.00
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