JAN2N3811L

Overview

The JAN2N3811L is a dual PNP small-signal bipolar junction transistor manufactured by Microsemi Corporation. It consists of two independent PNP transistors integrated into a single hermetically sealed metal can package, typically TO-77. The device is constructed from silicon and designed for high-reliability applications requiring radiation hardness. Key electrical specifications include a maximum collector current of 0.05 A and a collector-emitter breakdown voltage of 60 V. The component supports an operating temperature range up to 200 °C and meets MIL-PRF-19500 standards.

Feature Summary

• Hermetically sealed metal can construction ensures environmental protection and long-term reliability in harsh conditions.
• Radiation hardening provides resistance to total ionizing dose effects, suitable for space and military environments.
• Dual configuration integrates two independent PNP transistors within a single compact package for circuit density.

Applications

• Military avionics systems requiring radiation-tolerant switching components
• Spacecraft electronic subsystems and satellite communication equipment
• High-reliability industrial control circuits operating at elevated temperatures

Procurement Notes

Verify the specific manufacturing lot and screening level against the latest Microsemi datasheet before integration. Confirm that the supplier provides valid traceability documentation compliant with MIL-PRF-19500 requirements. Check for any product change notifications or obsolescence notices directly from the manufacturer to ensure supply continuity for long-term production programs.

Selection Notes

Select this component when a dual PNP configuration with hermetic sealing and radiation hardness is required. Ensure the design accommodates the through-hole mounting style and thermal characteristics of the metal can package. Verify that the 60V breakdown voltage and 50mA current limits align with the circuit's operational parameters under all expected temperature conditions.

Part Context

This part belongs to the JAN series of qualified discrete semiconductors produced by Microsemi (formerly Microsemi). The JAN prefix indicates compliance with strict military quality standards. It is functionally related to other 2N3811 variants but distinguished by its specific screening and hermetic packaging requirements defined in the relevant performance specification.

Replacement Considerations

Direct substitutes may include JANTXV2N3811L or JANTX2N3811L, which offer different screening levels within the same family. Cross-brand replacements require verification of pinout compatibility, electrical parameter margins, and radiation hardness ratings to ensure equivalent performance in critical applications.