JAN2N4854

JAN2N4854

$104.81
  • Description:TRANS NPN/PNP 40V 600MA TO-78-6
  • Series:-

SKU:066e580a2ea2 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS NPN/PNP 40V 600MA TO-78-6
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):600mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:600mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-78-6 Metal Can
  • Supplier Device Package:TO-78-6
  • Grade:Military
  • Qualification:MIL-PRF-19500/421

Download product information

JAN2N4854

Overview

The JAN2N4854/TR is a dual bipolar junction transistor (BJT) manufactured by Microchip Technology. It features an NPN/PNP configuration housed in a TO-78-6 hermetic package designed for through-hole mounting. The device supports a maximum DC collector current of 600 mA and operates with a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. Power dissipation is rated at 600 mW. The component exhibits a collector-emitter saturation voltage of 400 mV and a minimum DC current gain (hFE) of 35 at 100 uA/10 V, extending to a maximum of 300 at 150 mA/10 V. It functions within a temperature range of -65 C to +200 C.

Feature Summary

  • Dual NPN/PNP transistor configuration integrated into a single unit
  • Hermetic TO-78-6 metal can package suitable for harsh environments
  • Extended high-temperature operational capability up to 200 C

Applications

  • Military aerospace circuitry requiring radiation hardness
  • High-reliability analog signal processing
  • Precision switching applications in defense systems

Procurement Notes

Verify the specific suffix against official Microchip documentation to confirm exact binning or testing levels. Ensure the procurement channel provides traceability certificates required for military specifications. Confirm that the TO-78-6 package dimensions match the target PCB footprint before finalizing orders.

Selection Notes

Select this component when a matched dual NPN/PNP pair is required in a hermetic package. The wide operating temperature range makes it suitable for extreme environmental conditions. Verify that the 600 mA current rating and 600 mW power dissipation meet the specific circuit load requirements.

Part Context

This part belongs to the 2N4854 series of dual bipolar transistors produced by Microchip Technology. It is specifically engineered for high-reliability applications where standard plastic packages are insufficient. The JAN prefix typically indicates a military-grade qualification level, distinguishing it from commercial variants.

Replacement Considerations

Direct substitutes include the standard 2N4854 and other JAN-series dual BJTs with identical pinouts and electrical ratings. Verify package compatibility and thermal characteristics before substitution.

JAN2N4854JAN2N4854
$104.81
Buy Now