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The JAN2N4854/TR is a dual bipolar junction transistor (BJT) manufactured by Microchip Technology. It features an NPN/PNP configuration housed in a TO-78-6 hermetic package designed for through-hole mounting. The device supports a maximum DC collector current of 600 mA and operates with a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. Power dissipation is rated at 600 mW. The component exhibits a collector-emitter saturation voltage of 400 mV and a minimum DC current gain (hFE) of 35 at 100 uA/10 V, extending to a maximum of 300 at 150 mA/10 V. It functions within a temperature range of -65 C to +200 C.
Verify the specific suffix against official Microchip documentation to confirm exact binning or testing levels. Ensure the procurement channel provides traceability certificates required for military specifications. Confirm that the TO-78-6 package dimensions match the target PCB footprint before finalizing orders.
Select this component when a matched dual NPN/PNP pair is required in a hermetic package. The wide operating temperature range makes it suitable for extreme environmental conditions. Verify that the 600 mA current rating and 600 mW power dissipation meet the specific circuit load requirements.
This part belongs to the 2N4854 series of dual bipolar transistors produced by Microchip Technology. It is specifically engineered for high-reliability applications where standard plastic packages are insufficient. The JAN prefix typically indicates a military-grade qualification level, distinguishing it from commercial variants.
Direct substitutes include the standard 2N4854 and other JAN-series dual BJTs with identical pinouts and electrical ratings. Verify package compatibility and thermal characteristics before substitution.