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The JAN2N4854U/TR is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features an NPN/PNP complementary configuration housed in a U-6 surface-mount package. The device supports a maximum DC collector current of 600 mA and operates with a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. Power dissipation is rated at 600 mW. The component functions within a temperature range of -65°C to +200°C. Key electrical characteristics include a minimum DC current gain (hFE) of 35 at 100 µA/10 V and a maximum hFE of 300 at 150 mA/10 V.
Verify the JAN2N4854U/TR part number against official Microchip documentation to confirm specifications. Ensure the U-6 package type matches design requirements. Check for RoHS compliance status as indicated in manufacturer records. Confirm availability through authorized distributors due to potential long lead times associated with specialized military-grade components.
Select this component when a dual BJT configuration is required in a compact SMT footprint. Consider the 600 mA current rating and 40 V voltage limits for circuit compatibility. The wide operating temperature range makes it suitable for environments exceeding standard commercial limits. Verify that the 600 mW power dissipation rating aligns with thermal management capabilities.
This component belongs to the JAN series of dual small-signal BJTs produced by Microchip Technology. It serves as a ruggedized alternative to standard commercial transistors, designed for demanding operational conditions. The U-6 package provides a standardized form factor for surface-mount integration in high-density PCB layouts.
Consult official Microchip substitution guides for verified equivalents. Generic commercial dual BJTs may not meet the extended temperature or reliability standards. Verify pinout compatibility and electrical parameters before replacing.