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The JANKCA2N3810 is a dual PNP small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-78-6 metal can package for through-hole mounting. The device features a maximum DC collector current of 50 mA and a collector-emitter voltage rating of 60 V. Power dissipation is rated at 350 mW, with an operating temperature range spanning from -65 °C to +200 °C. The component belongs to the 2N3810 series and is designed for high-reliability applications requiring robust performance under extreme thermal conditions.
Verify the JAN prefix indicates compliance with MIL-PRF-19500 specifications. Confirm the specific suffix matches the required gain band or testing level. Ensure the TO-78-6 package orientation aligns with the PCB footprint. Request the official datasheet for detailed electrical limits. Validate that the supplier provides traceability documentation for military-grade components.
Select this component when dual PNP transistors are required in a compact metal package. Consider the 60 V breakdown voltage for low-voltage signal paths. Evaluate the 50 mA current limit against load requirements. Verify compatibility with high-temperature environments exceeding standard commercial ratings. Compare hFE ranges if specific gain matching is necessary for the circuit design.
This part is a military-grade variant of the standard 2N3810 dual PNP transistor. It falls under Microchip's portfolio of radiation-hardened and high-reliability discrete semiconductors. The JAN designation signifies adherence to strict military quality standards. It serves as a direct replacement for other qualified 2N3810 equivalents in defense and space applications.
Qualified substitutes include other MIL-PRF-19500/148 compliant dual PNP transistors in TO-78 packages. Verify pinout compatibility before substitution. Ensure equivalent voltage and current ratings are maintained. Check for identical thermal resistance characteristics.