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JANS1N5310UR-1/TR is listed in the Current Regulation - Diodes, Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE CUR REG 100V 3.63MA 500MW. Review the specifications below when checking this part for your BOM.
The JANS1N5310UR-1/TR is a current regulator diode manufactured by Microchip Technology. It provides a regulated current of 3.63 mA with a maximum limit voltage of 2.35 V and a peak operating voltage of 100 V. The device features a power dissipation rating of 500 mW and operates within a temperature range of -65°C to +175°C. It utilizes the DO-213AB MELF surface-mount package and is qualified under MIL-PRF-19500/463 for JANS level radiation hardness.
Verify the specific JANS radiation hardness qualification and lot traceability against the manufacturer's datasheet before procurement. Confirm that the DO-213AB MELF package orientation matches the design footprint. Ensure the supplier provides documentation confirming compliance with MIL-PRF-19500/463 standards for this specific part number.
Select this component when radiation tolerance is required alongside precise current regulation. Compare the 3.63 mA output against other series members like JAN1N5310-1/TR if through-hole mounting is acceptable. Verify that the 100 V peak operating voltage exceeds the maximum circuit voltage to prevent breakdown during transient conditions.
This part belongs to the 1N53xx series of current regulator diodes, which offer stable current flow across wide voltage variations. The JANS suffix denotes a specific military-grade radiation-hardened variant suitable for harsh environments where standard commercial or industrial parts would fail due to ionizing radiation effects.
Direct replacements include JAN1N5310-1/TR for through-hole applications or JANTX1N5310UR-1 for non-radiation-hardened surface-mount needs. Verify electrical parameters match exactly; do not substitute without confirming radiation tolerance requirements are met.
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