JANS1N5802

Single Diodes Overview

The JANS1N5802 is a military-qualified ultrafast recovery rectifier diode manufactured by Microchip Technology. It features a 50 V maximum repetitive peak reverse voltage and a 2.5 A average forward current rating. The device utilizes voidless hermetically sealed glass construction with an internal metallurgical bond, ensuring high reliability for critical applications. It operates within a junction temperature range of -65°C to +175°C and exhibits a maximum reverse recovery time of 25 ns.

Single Diodes Feature Summary

• Military qualification per MIL-PRF-19500/477 standards
• Voidless hermetically sealed glass construction
• Ultrafast recovery characteristics for high-speed switching

Single Diodes Applications

• Spacecraft power systems
• Military aircraft electronics
• Shipboard electronic equipment

Single Diodes Procurement Notes

Verify the specific suffix (e.g., URS/TR) against the datasheet to confirm package type and reel specifications. Confirm RoHS exemption status as required by project compliance. Validate that the supplier provides traceability documentation consistent with military procurement requirements.

Single Diodes Selection Notes

Select this component when military-grade reliability and ultrafast recovery are mandatory. Ensure the circuit design accommodates the 2.5 A current rating and 50 V reverse voltage limits. Consider the surface mount MELF package dimensions during PCB layout planning.

Single Diodes Part Context

This part belongs to the 1N5802 series of ultrafast recovery rectifiers. It shares electrical characteristics with commercial variants but offers enhanced durability through hermetic sealing and strict manufacturing controls defined by military specifications.

Single Diodes Replacement Considerations

Equivalent parts include JAN1N5802, JANTX1N5802, and JANTXV1N5802. Verify package compatibility and qualification level before substitution.