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Product Detailed Parameters
- Description：TRANS 2NPN 60V 30MA TO-78-6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：30mA
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：300 @ 1mA, 5V
- Power - Max：350mW
- Frequency - Transition：-
- Operating Temperature：200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-78-6 Metal Can
- Supplier Device Package：TO-78-6
- Grade：Military
- Qualification：MIL-PRF-19500/355
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Overview
The JANS2N2920 is a dual NPN silicon small-signal bipolar junction transistor manufactured by Microchip Technology. It features a TO-78-6 metal can package designed for through-hole mounting. The device supports a maximum collector current of 30 mA and a collector-emitter breakdown voltage of 60 V. Power dissipation is rated at 350 mW, with a maximum junction temperature of 200°C. DC current gain (hFE) is specified at a minimum of 150 when tested at 1 mA and 5 V. The component operates within a temperature range of -65°C to +200°C.
Feature Summary
- Dual NPN configuration in a single hermetic metal can package
- High junction temperature rating up to 200°C
- Low collector cutoff current specification
Applications
- Military aerospace electronic circuits
- Spacecraft signal processing systems
- Radiation-hardened analog switching applications
Procurement Notes
Verify the specific procurement suffix against official Microchip documentation to confirm radiation hardness levels and screening standards. Ensure that the ordering information matches the required military or space-grade specifications before finalizing purchase orders.
Selection Notes
Select this component for designs requiring dual NPN transistors in a hermetically sealed environment. Confirm that the 60V collector-emitter voltage and 30mA current limits align with circuit requirements. Verify thermal management capabilities given the 350mW power dissipation constraint in the TO-78-6 package.
Part Context
This part belongs to the 2N29xx series of dual NPN transistors produced by Microchip Technology. It serves as a specialized variant intended for high-reliability environments, differing from commercial equivalents through enhanced manufacturing controls and packaging suitable for extreme conditions.
Replacement Considerations
Consult official substitution lists for verified alternatives. Generic commercial dual NPN transistors may not meet the radiation tolerance or hermetic sealing requirements of this specific military-grade component.
