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The JANS2N5796 is a dual PNP small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is designed for surface-mount installation. The device features a maximum collector-emitter voltage of 60 V, a collector-base voltage of 60 V, and an emitter-base voltage of 5 V. Power dissipation is rated at 5 W, with a collector-emitter saturation voltage of 1.6 V. The component operates within a temperature range of -65°C to +175°C. Maximum DC current gain (hFE) is specified as 300 at 150 mA and 10 V.
Verify the JANS prefix indicates specific military or space-grade qualification standards required for the target application. Confirm RoHS status as non-compliant based on available documentation. Ensure the supplier provides traceable manufacturing data consistent with defense procurement requirements.
Select this component when a dual PNP configuration with high power handling is necessary. Compare against the JANS2N5794U/TR if NPN polarity is preferred instead. Verify that the 60 V voltage ratings align with circuit requirements. Consider the SMD/SMT mounting style for board layout compatibility.
This part belongs to the JANS series of dual small-signal BJTs produced by Microchip Technology. It shares the dual PNP architecture with related models like the JANS2N5795 but differs in specific electrical parameters and packaging configurations. The series targets high-reliability environments requiring robust semiconductor performance.
Publicly confirmed substitute part numbers are not available in the provided source material.