JANS2N5796A

JANS2N5796A

$343.13
  • Description:TRANS 2PNP 60V 600MA TO-78-6
  • Series:-

SKU:868526842014 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:TRANS 2PNP 60V 600MA TO-78-6
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):600mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:600mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-78-6 Metal Can
  • Supplier Device Package:TO-78-6
  • Grade:Military
  • Qualification:MIL-PRF-19500/496

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JANS2N5796A

Overview

The JANS2N5796A is a dual PNP bipolar junction transistor (BJT) array manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-78-6 hermetic package designed for through-hole mounting. The device supports a collector-emitter voltage of 60 V and a collector-base voltage of 60 V, with an emitter-base voltage rating of 5 V. It features a maximum power dissipation of 600 mW and a continuous collector current of 600 mA. The component operates within a temperature range of -65°C to +175°C.

Feature Summary

  • Dual PNP configuration integrated into a single hermetic package
  • High-temperature operation capability up to 175°C
  • Radiation-hardened design suitable for harsh environments

Applications

  • Military aerospace systems
  • Spacecraft electronics
  • Harsh environment signal processing

Procurement Notes

Verify the specific suffix designation to ensure the correct radiation hardening level and package variant matches the design requirements. Confirm that the TO-78-6 hermetic package aligns with the thermal and mechanical constraints of the target application. Validate compliance with relevant military specifications before finalizing procurement decisions.

Selection Notes

Select this component when a radiation-tolerant dual PNP transistor array is required for high-reliability applications. Ensure the 60V voltage ratings and 600mA current limits meet the circuit demands. Consider the through-hole mounting style and hermetic sealing properties for environmental protection in demanding operational conditions.

Part Context

This part belongs to the JANS series of radiation-hardened semiconductors from Microchip Technology. It is specifically engineered for defense and space applications where standard commercial components would fail due to ionizing radiation exposure. The JANS series ensures long-term stability and performance in extreme environments.

Replacement Considerations

JANS2N5796U/TR

FAQ

What is the maximum operating temperature for the JANS2N5796A?

The maximum operating temperature is +175°C.

Is the JANS2N5796A available in a surface-mount package?

No, the JANS2N5796A is specified for through-hole mounting in a TO-78-6 package.

JANS2N5796AJANS2N5796A
$343.13
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