SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The JANS2N5796A is a dual PNP bipolar junction transistor (BJT) array manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-78-6 hermetic package designed for through-hole mounting. The device supports a collector-emitter voltage of 60 V and a collector-base voltage of 60 V, with an emitter-base voltage rating of 5 V. It features a maximum power dissipation of 600 mW and a continuous collector current of 600 mA. The component operates within a temperature range of -65°C to +175°C.
Verify the specific suffix designation to ensure the correct radiation hardening level and package variant matches the design requirements. Confirm that the TO-78-6 hermetic package aligns with the thermal and mechanical constraints of the target application. Validate compliance with relevant military specifications before finalizing procurement decisions.
Select this component when a radiation-tolerant dual PNP transistor array is required for high-reliability applications. Ensure the 60V voltage ratings and 600mA current limits meet the circuit demands. Consider the through-hole mounting style and hermetic sealing properties for environmental protection in demanding operational conditions.
This part belongs to the JANS series of radiation-hardened semiconductors from Microchip Technology. It is specifically engineered for defense and space applications where standard commercial components would fail due to ionizing radiation exposure. The JANS series ensures long-term stability and performance in extreme environments.
JANS2N5796U/TR
The maximum operating temperature is +175°C.
No, the JANS2N5796A is specified for through-hole mounting in a TO-78-6 package.