JANS2N5796U

Overview

The JANS2N5796U is a dual small-signal PNP bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is designed for surface-mount installation. The device features a maximum collector-emitter voltage of 60 V, a collector-base voltage of 60 V, and an emitter-base voltage of 5 V. Power dissipation is rated at 5 W, with a collector-emitter saturation voltage of 1.6 V. The component operates within a temperature range of -65°C to +175°C. Maximum DC current gain (hFE) is specified as 300 at 150 mA and 10 V.

Feature Summary

• Dual configuration integrating two PNP transistors in a single package
• High power dissipation capability suitable for demanding applications
• Extended operating temperature range up to +175°C

Applications

• Military aerospace electronic systems
• High-reliability signal processing circuits
• Ruggedized amplifier stages

Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to confirm compliance with required quality standards. Ensure the component matches the intended application requirements regarding voltage ratings and thermal management capabilities before procurement.

Selection Notes

Select this component when a dual PNP configuration with high power handling is required. Consider the 60 V voltage limits and 5 W dissipation rating against circuit demands. Verify compatibility with surface-mount assembly processes and ensure adequate thermal design for the +175°C maximum operating temperature.

Part Context

This part belongs to the JANS series of dual small-signal BJTs from Microchip Technology. It is distinct from through-hole variants like the Jantxv2N5796 and complements other dual configurations such as the NPN-based JANS2N5794U/TR within the same product family.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.