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The JANSF2N3810L is a dual small-signal bipolar junction transistor manufactured by Microchip Technology. It features a PNP configuration housed in a TO-78-6 metal can package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 60V and a continuous collector current of 50mA. Power dissipation is rated at 350mW. This component belongs to the HRDS product line, indicating specialized construction for high-reliability environments.
Verify that the specific order includes the required environmental compliance documentation and quality certification levels appropriate for defense or space applications. Confirm that the TO-78-6 package dimensions match the target PCB footprint requirements. Ensure that the procurement channel provides traceability records consistent with military supply chain standards.
Select this component when a dual PNP small-signal transistor is required for harsh environment applications. The TO-78-6 metal can offers superior thermal and mechanical stability compared to plastic packages. Consider the 60V voltage rating and 50mA current limit to ensure operation remains within safe electrical boundaries for the intended circuit design.
This part is a specialized variant of the standard 2N3810 series, adapted for high-reliability use. It maintains the electrical characteristics of the base model while incorporating enhanced manufacturing processes. The JANS prefix indicates qualification for specific military or aerospace standards, distinguishing it from commercial grade equivalents.
Direct replacements include JAN2N3810 and JANS2N3810L. Verify that substitute parts meet the same radiation hardness and reliability specifications required by the application.