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The JANSF2N6987 is a radiation-hardened quad PNP silicon switching transistor array manufactured by Microchip Technology. It features a TO-116-14 through-hole package and operates within a temperature range of -55°C to +125°C. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 60 V, a maximum collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a maximum DC collector current of 600 mA with a total power dissipation of 1.5 W. It is qualified under MIL-PRF-19500/558 for space and high-reliability applications.
Verify the specific suffix 'F' indicates bulk packaging when ordering. Confirm radiation hardness levels and lot traceability requirements align with project specifications. Ensure procurement channels are authorized to handle military-grade components. Validate that the TO-116-14 package matches the mechanical constraints of the target assembly. Request full test reports and certification documents upon delivery.
Select this component when radiation tolerance is critical for mission success. The quad PNP configuration reduces board space compared to discrete solutions. Verify thermal management capabilities meet the 1.5 W dissipation limit in the intended enclosure. Consider the through-hole mounting style for robust mechanical connections. Compare against other MIL-PRF-19500/558 devices if alternative pinouts or ratings are needed.
This part belongs to the 2N6987 family of multiple PNP silicon switching transistors. It shares core electrical characteristics with standard variants like the 2N6987U but includes enhanced radiation hardening. The 'JANS' prefix denotes a specific qualification level for space applications. It serves as a specialized version of general-purpose BJT arrays designed for extreme environmental conditions.