JANSM2N3810

Overview

The JANSM2N3810 is a dual PNP small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a silicon construction and is designed for through-hole mounting in a TO-78-6 package. The device supports a maximum DC collector current of 50 mA and withstands a collector-emitter voltage of 60 V. Power dissipation is rated at 350 mW, with an operating temperature range spanning from -65°C to +200°C.

Feature Summary

• Dual PNP configuration within a single package
• High thermal stability up to 200°C
• Silicon-based semiconductor technology

Applications

• Amplification circuits
• Switching applications
• Small-signal processing

Procurement Notes

Verify the specific suffix requirements for military or aerospace qualification standards when ordering. Confirm that the TO-78-6 through-hole package aligns with the target PCB layout constraints. Ensure that the 350 mW power dissipation rating is sufficient for the intended thermal environment. Check for any specific handling instructions related to high-temperature operation limits.

Selection Notes

Select this component for designs requiring dual PNP transistors with high-temperature resilience. The 60V voltage rating suits low-voltage signal processing tasks. Consider the physical dimensions of the TO-78-6 package during mechanical integration. Evaluate the 50 mA current limit against peak load requirements to ensure reliable operation under all conditions.

Part Context

This part belongs to the 2N3810 series of dual small-signal BJTs. It shares core electrical characteristics with other variants in the family, such as the JAN2N3810, but differs in packaging and specific qualification levels. The series is established for general-purpose amplification and switching roles in rugged environments.

Replacement Considerations

JAN2N3810