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The JANSM2N3810L is a dual PNP bipolar junction transistor array manufactured by Microchip Technology. It utilizes silicon technology and features a TO-78-6 metal can package for through-hole mounting. The device supports a maximum DC collector current of 50 mA and a power dissipation of 350 mW. Voltage ratings include a maximum collector-emitter voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. The component operates within a temperature range from -65°C to +200°C.
Verify the specific ordering suffix and manufacturer designation when sourcing this component. Confirm that the procurement channel provides valid traceability documentation required for military or aerospace specifications. Ensure the received part matches the JANSM2N3810L designation exactly, as variations exist within the family. Check for compliance with relevant environmental and trade regulations before finalizing orders.
Select the JANSM2N3810L when a hermetically sealed dual PNP transistor is required for high-temperature operation up to 200°C. This component is suitable for designs needing robust performance in harsh environments where standard plastic packages are insufficient. Consider the TO-78-6 form factor for through-hole integration in ruggedized circuit boards requiring high reliability.
This component belongs to the 2N3810 series of dual small-signal BJT arrays produced by Microchip Technology. It shares core electrical characteristics with other variants in the family but is distinguished by its specific military-grade packaging and qualification standards. The JAN prefix indicates adherence to strict manufacturing controls for defense and space applications.
Public confirmed substitute part numbers: JANS2N3810U, JANSM2N3810U.