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The JANSM2N3810U/TR is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a silicon PNP configuration housed in a surface-mount SQ package. The device supports a maximum collector current of 50 mA and a power dissipation of 350 mW. Voltage ratings include a collector-emitter voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. The component operates within a temperature range of -65°C to +200°C.
Verify the specific suffix 'TR' indicates tape-and-reel packaging when ordering. Confirm that the JANSM variant meets all required military qualification standards for the intended application. Ensure compatibility with surface-mount assembly processes. Check for any export control classifications or restricted distribution channels applicable to this component series.
Select this component when a dual PNP BJT is required in a surface-mount form factor. Consider the 60 V rating and 50 mA current limit for appropriate load matching. Evaluate the thermal management requirements given the 350 mW dissipation limit. Compare against through-hole alternatives if board space allows for different packaging options.
This part belongs to the 2N3810 family of dual PNP transistors produced by Microchip Technology under the JANSM designation. The JANSM series typically denotes a specific grade or screening level within the broader product line. It serves as a surface-mount alternative to traditional through-hole packages like TO-78, maintaining similar electrical characteristics while adapting to modern PCB assembly techniques.