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Product Detailed Parameters
- Description：TRANS 2PNP DUAL 60V 50MA 6-SMD
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：50mA
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 1mA, 5V
- Power - Max：350mW
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：6-SMD
- Grade：Military
- Qualification：MIL-PRF-19500/336
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Overview
The JANSP2N3810U/TR is a dual small-signal PNP bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 60 V and a maximum collector-base voltage of 60 V, with an emitter-base voltage rating of 5 V. The device supports a maximum DC collector current of 50 mA and dissipates up to 350 mW of power. It operates within a temperature range of -65°C to +200°C. The component utilizes a surface-mount SQ package configuration.
Feature Summary
- Dual PNP transistor configuration for compact circuit integration
- High-temperature operation capability up to 200°C
- Small-signal switching and amplification functionality
Applications
- Military aerospace electronic systems
- Radiation-hardened circuit designs
- High-reliability signal processing modules
Procurement Notes
Verify the specific suffix 'TR' against official Microchip documentation to confirm tape-and-reel packaging status, as datasheets may list bulk options. Confirm radiation hardness levels and qualification standards required for the intended application environment before procurement.
Selection Notes
Select this component when a radiation-tolerant or hardened dual PNP BJT is required for high-temperature environments. Ensure the 60V voltage rating and 50mA current limits align with the circuit design requirements. Compare pinout compatibility with existing board layouts due to the specific SQ package geometry.
Part Context
This part belongs to the 2N3810 series of dual small-signal transistors produced by Microchip. The JAN prefix indicates it meets specific military or space-grade quality standards, distinguishing it from commercial variants. It serves as a specialized discrete semiconductor solution for demanding operational conditions.
Replacement Considerations
JANSP2N3810U
FAQ
What is the maximum operating temperature for the JANSP2N3810U/TR?
The maximum operating temperature is +200°C.
Is the JANSP2N3810U/TR available in a through-hole package?
No, the JANSP2N3810U/TR is specified with a surface-mount SQ package.
What is the DC current gain range for this component?
The DC current gain (hFE) ranges from a minimum of 150 to a maximum of 450 at 100 uA and 5 VDC.
