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The JANSR2N3810 is a dual PNP silicon small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It is housed in a TO-78-6 hermetically sealed metal can package designed for through-hole mounting. The device supports a maximum DC collector current of 50 mA and withstands a collector-emitter voltage (VCEO) of 60 V, with a matching collector-base voltage (VCBO) of 60 V. The emitter-base breakdown voltage (VEBO) is rated at 5 V. Power dissipation is limited to 350 mW. The component operates within an extended temperature range from -65°C to +200°C. It features a minimum DC current gain (hFE) of 150 at 100 uA and 5 VDC, with a maximum gain of 450 under the same conditions.
Verify the specific suffix 'R' against the official Microchip datasheet to confirm if it denotes a restricted lot or specific screening level distinct from the standard JANS variant. Ensure the procurement channel provides traceability documentation required for space-grade components. Confirm that the TO-78-6 package matches the mechanical constraints of the target assembly.
Select this component when a dual PNP configuration is required in a radiation-hardened or high-temperature environment. Compare the 350 mW power dissipation limit against circuit requirements. Verify that the 60 V voltage ratings are sufficient for the application's peak signals. Consider the TO-78-6 package size for board layout compatibility.
This part belongs to the 2N3810 series of dual small-signal BJTs. The JANS prefix indicates a military-grade, space-qualified version produced under strict quality controls. It shares core electrical characteristics with commercial variants but differs in packaging and reliability standards.
The JAN2N3810L/TR is a documented alternative within the same series offering similar electrical parameters. Verify pinout compatibility and package dimensions before substitution.