JANSR2N3810

JANSR2N3810

$157.05
  • Description:TRANS 2PNP 60V 50MA TO-78-6
  • Series:-

SKU:f11f04a8e858 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP 60V 50MA TO-78-6
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):50mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 1mA, 5V
  • Power - Max:350mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-78-6 Metal Can
  • Supplier Device Package:TO-78-6
  • Grade:Military
  • Qualification:MIL-PRF-19500/336

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JANSR2N3810

Overview

The JANSR2N3810 is a dual PNP silicon small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It is housed in a TO-78-6 hermetically sealed metal can package designed for through-hole mounting. The device supports a maximum DC collector current of 50 mA and withstands a collector-emitter voltage (VCEO) of 60 V, with a matching collector-base voltage (VCBO) of 60 V. The emitter-base breakdown voltage (VEBO) is rated at 5 V. Power dissipation is limited to 350 mW. The component operates within an extended temperature range from -65°C to +200°C. It features a minimum DC current gain (hFE) of 150 at 100 uA and 5 VDC, with a maximum gain of 450 under the same conditions.

Feature Summary

  • Hermetically sealed metal can construction for environmental protection
  • High thermal stability supporting operation up to 200°C
  • Dual PNP configuration in a single package

Applications

  • Military aerospace electronic systems
  • Spacecraft avionics circuits
  • High-reliability signal processing

Procurement Notes

Verify the specific suffix 'R' against the official Microchip datasheet to confirm if it denotes a restricted lot or specific screening level distinct from the standard JANS variant. Ensure the procurement channel provides traceability documentation required for space-grade components. Confirm that the TO-78-6 package matches the mechanical constraints of the target assembly.

Selection Notes

Select this component when a dual PNP configuration is required in a radiation-hardened or high-temperature environment. Compare the 350 mW power dissipation limit against circuit requirements. Verify that the 60 V voltage ratings are sufficient for the application's peak signals. Consider the TO-78-6 package size for board layout compatibility.

Part Context

This part belongs to the 2N3810 series of dual small-signal BJTs. The JANS prefix indicates a military-grade, space-qualified version produced under strict quality controls. It shares core electrical characteristics with commercial variants but differs in packaging and reliability standards.

Replacement Considerations

The JAN2N3810L/TR is a documented alternative within the same series offering similar electrical parameters. Verify pinout compatibility and package dimensions before substitution.

JANSR2N3810JANSR2N3810
$157.05
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