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The JANSR2N3810L is a silicon PNP dual small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes a hermetically sealed TO-78 metal can package with six leads for through-hole mounting. The device operates within an extended temperature range from -65°C to +200°C, supporting high-temperature environments. Key electrical ratings include a maximum collector-emitter voltage of 60V and a maximum collector current of 50mA. The component dissipates up to 350mW of power and features a minimum DC current gain of 100 at specified test conditions.
Verify the specific suffix against official Microchip documentation to confirm JANSR qualification levels. Confirm radiation hardness requirements match application needs. Check for recent Product Change Notifications regarding manufacturing updates. Ensure procurement channels are authorized to prevent counterfeit components. Validate packaging details for handling sensitive semiconductor devices.
Select this component when radiation tolerance and high-temperature operation are mandatory. Compare hFE ranges against circuit biasing requirements. Verify that the TO-78 package fits the mechanical constraints. Consider thermal management strategies given the 350mW dissipation limit. Evaluate alternative JANTX or JAN variants if radiation hardening is not required.
This part belongs to the 2N3810 series of dual PNP transistors. It shares core electrical characteristics with standard commercial equivalents but includes enhanced screening and sealing. The JANSR designation indicates specific radiation hardening and reliability standards defined by military specifications.
Direct substitutes include JAN2N3810L and JANTX2N3810L. Verify radiation performance differences before swapping. Standard 2N3810 parts lack the necessary environmental sealing and radiation tolerance.