JANSR2N3810L

JANSR2N3810L

$158.54
  • Description:TRANS 2PNP 60V 50MA TO-78-6
  • Series:-

SKU:fe499083dd4a Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP 60V 50MA TO-78-6
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):50mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 1mA, 5V
  • Power - Max:350mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-78-6 Metal Can
  • Supplier Device Package:TO-78-6
  • Grade:Military
  • Qualification:MIL-PRF-19500/336

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JANSR2N3810L

Overview

The JANSR2N3810L is a silicon PNP dual small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes a hermetically sealed TO-78 metal can package with six leads for through-hole mounting. The device operates within an extended temperature range from -65°C to +200°C, supporting high-temperature environments. Key electrical ratings include a maximum collector-emitter voltage of 60V and a maximum collector current of 50mA. The component dissipates up to 350mW of power and features a minimum DC current gain of 100 at specified test conditions.

Feature Summary

  • Hermetically sealed metal can construction designed for harsh environments
  • Qualified to JANS radiation-hardened specifications
  • Extended operating temperature capability up to +200°C

Applications

  • Radiation-tolerant aerospace electronics
  • High-temperature industrial control systems
  • Military-grade signal processing circuits

Procurement Notes

Verify the specific suffix against official Microchip documentation to confirm JANSR qualification levels. Confirm radiation hardness requirements match application needs. Check for recent Product Change Notifications regarding manufacturing updates. Ensure procurement channels are authorized to prevent counterfeit components. Validate packaging details for handling sensitive semiconductor devices.

Selection Notes

Select this component when radiation tolerance and high-temperature operation are mandatory. Compare hFE ranges against circuit biasing requirements. Verify that the TO-78 package fits the mechanical constraints. Consider thermal management strategies given the 350mW dissipation limit. Evaluate alternative JANTX or JAN variants if radiation hardening is not required.

Part Context

This part belongs to the 2N3810 series of dual PNP transistors. It shares core electrical characteristics with standard commercial equivalents but includes enhanced screening and sealing. The JANSR designation indicates specific radiation hardening and reliability standards defined by military specifications.

Replacement Considerations

Direct substitutes include JAN2N3810L and JANTX2N3810L. Verify radiation performance differences before swapping. Standard 2N3810 parts lack the necessary environmental sealing and radiation tolerance.

JANSR2N3810LJANSR2N3810L
$158.54
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