JANSR2N3810U/TR

Overview

The JANSR2N3810U/TR is a dual PNP small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a silicon construction with a maximum collector-emitter voltage of 60V and a continuous collector current rating of 50mA. The device dissipates up to 350mW of power and operates within a temperature range of -65°C to +200°C. Packaged in a surface-mount LCC-6 configuration, it offers a minimum DC current gain of 100 at 10µA and a maximum of 450 at 100µA.

Feature Summary

• Dual PNP configuration for compact signal processing
• Extended high-temperature operation capability
• Surface-mount LCC-6 package design

Applications

• High-reliability amplification circuits
• Switching applications in harsh environments
• Signal processing systems requiring extended thermal stability

Procurement Notes

Verify the specific suffix 'TR' indicates tape-and-reel packaging when sourcing. Confirm RoHS non-compliance status as indicated by manufacturer data. Ensure procurement channels are authorized for aerospace-grade components. Validate that the LCC-6 footprint matches the target PCB layout requirements before finalizing orders.

Selection Notes

Select this component for designs requiring dual PNP transistors with high-temperature resilience. Consider the 60V voltage rating and 50mA current limits for circuit compatibility. Evaluate the LCC-6 package for surface-mount assembly constraints. Compare against JAN variants if through-hole mounting or different packaging formats are required for the specific application.

Part Context

This part belongs to the 2N3810 series of dual PNP small-signal BJTs. It represents the radiation-hardened (JANS) variant designed for demanding environments. The 'TR' suffix distinguishes it from bulk-packaged versions like the JANS2N3810U, indicating reel-based delivery for automated assembly processes.

Replacement Considerations

Public confirmed substitute part numbers: JANS2N3810U, JANSD2N3810U/TR.