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JANTX2N2323A
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Product Detailed Parameters
- Description：SCR 50V TO5
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Voltage - Off State：50 V
- Voltage - Gate Trigger (Vgt) (Max)：600 mV
- Current - Gate Trigger (Igt) (Max)：20 µA
- Current - Hold (Ih) (Max)：2 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm)：15A @ 60Hz
- SCR Type：Standard Recovery
- Operating Temperature：-65°C ~ 125°C
- Grade：Military
- Qualification：MIL-PRF-19500/276
- Mounting Type：Through Hole
- Package / Case：TO-205AA, TO-5-3 Metal Can
- Supplier Device Package：TO-5
- Voltage - On State (Vtm) (Max)：-
- Current - On State (It (AV)) (Max)：-
- Current - On State (It (RMS)) (Max)：-
- Current - Off State (Max)：10 µA
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Overview
The JANTX2N2323A is a silicon NPN power bipolar junction transistor manufactured by Microchip Technology. It is designed for through-hole mounting in a TO-5 metal can package and complies with the MIL-PRF-19500/276 military specification. The device supports a maximum collector current of 1.5 A and operates within an ambient temperature range of -65°C to +200°C. Key electrical ratings include a collector-emitter voltage of 40 V, a collector-base voltage of 75 V, and an emitter-base voltage of 5 V. Power dissipation is rated at 1 W, with a collector-emitter saturation voltage of 900 mV.
Feature Summary
- Military-grade qualification compliant with MIL-PRF-19500/276 standards
- High thermal stability enabling operation up to 200°C
- Robust single NPN configuration in a hermetically sealed metal can
Applications
- High-reliability aerospace control systems
- Military-grade power amplification circuits
- Harsh environment switching applications
Procurement Notes
Verify that the component carries the specific JANTX suffix to confirm it meets the required military screening levels. Ensure the procurement documentation explicitly references MIL-PRF-19500/276 compliance. Confirm the physical package matches the TO-5 metal can specification to guarantee proper mechanical fit and thermal performance in the target assembly.
Selection Notes
Select this component when a ruggedized NPN BJT is required for high-temperature environments exceeding standard commercial limits. The 1.5 A current rating and 1 W power dissipation define its capacity for moderate power handling. Verify that the 40 V collector-emitter voltage aligns with the circuit's maximum operating conditions before integration.
Part Context
This part belongs to the 2N2323 series of silicon NPN transistors produced under military specifications. The JANTX designation indicates a specific level of quality assurance and testing beyond the base JAN grade. These devices are engineered for long-term reliability in defense and space applications where standard industrial components would fail due to environmental stress.
Replacement Considerations
Direct replacements must match the MIL-PRF-19500/276 specification and TO-5 package dimensions. Cross-compatibility with other manufacturers' military-grade equivalents requires verification of pinout alignment and exact electrical parameter tolerances. Do not substitute with commercial variants lacking the necessary thermal and radiation hardness.
