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The JANTX2N20U is a silicon NPN single small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a collector-emitter voltage of 60 V, a collector-base voltage of 70 V, and an emitter-base voltage of 6 V. The device supports a continuous collector current of 30 mA with a power dissipation rating of 350 mW. Operating temperatures range from -65 °C to +200 °C. The component utilizes a TO-78-6 through-hole package and provides a DC current gain (hFE) between 175 and 600.
Verify the specific ordering suffix and revision level against the official Microchip datasheet before procurement. Confirm that the TO-78-6 package matches the target PCB footprint requirements. Ensure the supplier provides traceability documentation required for defense or space-grade components. Check for any recent product change notifications affecting pinout or electrical characteristics.
Select this component when high-temperature stability and radiation hardness are critical design constraints. Compare the 350 mW power dissipation limit against thermal management capabilities in the final assembly. Verify that the 30 mA collector current meets the load requirements. Consider the TO-78-6 package size if board real estate is limited.
This part belongs to the JAN series of rad-hardened discrete semiconductors produced by Microchip. These components are designed to withstand ionizing radiation effects common in space and high-altitude environments. The JANTX variant typically offers tighter parameter screening compared to standard military grades.
Direct replacements include the JAN2N2920U for standard military grade applications. Verify compatibility with the JANTXV2N2920U if higher performance screening is required. Cross-reference with other manufacturers' rad-hard NPN transistors only if pinouts and electrical specs match exactly.