JANTX2N3810L

Overview

The JANTX2N3810L is a silicon PNP dual small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes a TO-78-6 hermetically sealed metal can package designed for through-hole mounting. The device supports a maximum DC collector current of 50 mA with a collector-emitter breakdown voltage (VCEO) and collector-base breakdown voltage (VCBO) both rated at 60 V. The emitter-base breakdown voltage (VEBO) is specified at 5 V. Power dissipation capability is 350 mW, allowing operation within an extended temperature range from -65°C to +200°C. DC current gain (hFE) ranges from a minimum of 100 to a maximum of 450 under defined test conditions.

Feature Summary

• Hermetically sealed TO-78 metal can construction ensuring environmental durability
• Dual PNP configuration providing matched transistor pairs in a single package
• Extended thermal stability supporting high-temperature operational environments

Applications

• General-purpose switching and amplification circuits
• Matched dual transistor applications requiring consistent electrical characteristics
• Harsh environment electronics utilizing radiation-hardened or screened components

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm the exact screening level and testing requirements associated with the JANTX designation. Ensure that the procurement documentation explicitly references MIL-PRF-19500 compliance standards relevant to this component class. Confirm package integrity and pinout alignment prior to integration into printed circuit board designs.

Selection Notes

Select this component when a dual PNP configuration with high-temperature tolerance and hermetic sealing is required. Compare the 60 V voltage ratings and 50 mA current limits against circuit demands to ensure adequate headroom. Evaluate the TO-78-6 footprint constraints against available board space and verify that the 350 mW power dissipation rating accommodates the expected thermal load without exceeding junction temperature limits.

Part Context

This part belongs to the 2N3810 series of silicon PNP transistors produced by Microchip Technology. It represents a specific screening level variant within the broader family of military-grade and high-reliability discrete semiconductors. The component shares core electrical specifications with standard commercial equivalents but incorporates enhanced manufacturing controls and testing protocols suitable for demanding industrial and aerospace applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the available source material.