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The JANTX2N5793A is a dual small-signal NPN bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is designed for through-hole mounting in bulk packaging. The device features a maximum collector-emitter voltage of 40 V, a collector-base voltage of 75 V, and an emitter-base voltage of 6 V. It supports a continuous collector current of 600 mA with a power dissipation rating of 600 mW. The unit operates within a temperature range of -65°C to +200°C and offers a maximum DC current gain of 300 at 150 mA and 10 V.
Verify the specific JAN qualification status and datasheet revision when sourcing this component. Confirm that the manufacturer accepts special orders for this military-grade part number. Ensure compatibility with existing PCB footprints before procurement.
Select this component for applications requiring dual NPN configurations in high-temperature environments. Verify that the 600 mA current rating and 600 mW power dissipation meet the design requirements. Consider the through-hole TO-8 or similar metal can package constraints during layout.
This part belongs to the Microchip (formerly Microsemi) JAN series of dual small-signal BJTs. It shares the base 2N5793 electrical characteristics but adheres to stricter military screening standards. The dual configuration allows for compact implementation of differential pairs or push-pull stages.
The standard commercial 2N5793 serves as a direct functional substitute if military screening is not required. Verify pinout compatibility and package dimensions before substitution.