JANTX2N5796

Overview

The JANTX2N5796 is a dual PNP small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-78-6 through-hole package. The device features a maximum collector-emitter voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. It supports a continuous collector current of 600 mA with a power dissipation rating of 600 mW. The component operates within a temperature range of -65°C to +175°C and specifies a minimum DC current gain (hFE) of 40.

Feature Summary

• Dual configuration integrating two PNP transistors within a single hermetic package.

Applications

• Military and aerospace electronic systems requiring radiation-hardened or high-reliability components.

Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to confirm compliance with required military specifications. Ensure that the procurement channel provides valid traceability records for the component's manufacturing history. Confirm that the package type matches the intended circuit board layout requirements before finalizing acquisition.

Selection Notes

Select this component when a dual PNP configuration is required in a through-hole format. Verify that the 600 mA current limit and 600 mW power dissipation meet the circuit design constraints. Ensure the operating environment falls within the specified -65°C to +175°C temperature range for reliable performance.

Part Context

This part belongs to the JANTX series of dual small-signal BJTs produced by Microchip Technology. It serves as a specialized alternative to standard commercial dual transistors, offering enhanced reliability characteristics suitable for demanding operational environments where standard components may not suffice.