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The JANTX2N5796U/TR is a dual PNP small-signal bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is designed for surface-mount installation in an SMD/SMT configuration. The device supports a maximum collector-emitter voltage of 60 V and a collector-base voltage of 60 V, with an emitter-base voltage rating of 5 V. It handles a power dissipation of 5 W and operates within a temperature range of -65°C to +175°C. The component features a maximum DC current gain (hFE) of 300 at 150 mA and 10 V, with a collector-emitter saturation voltage of 1.6 V.
Verify the specific suffix TR indicates tape-and-reel packaging when sourcing. Confirm RoHS compliance status as N on distributor listings. Validate that the JANS or JAN prefix requirements are not mandatory for the intended application environment before finalizing procurement orders.
Select this component for designs requiring dual PNP transistors in a space-constrained surface-mount layout. Ensure the circuit voltage does not exceed 60 V across collector-emitter terminals. Consider the 5 W power dissipation capability and verify adequate thermal management for the operating environment.
This part belongs to the Microchip JANTX series of radiation-hardened or high-reliability silicon bipolar transistors. The JANTX designation typically denotes enhanced screening compared to standard commercial grades. The U suffix often indicates a specific case outline or pinout configuration within the Microchip portfolio.
Direct replacements must match the dual PNP configuration, 60 V voltage ratings, and surface-mount package. Verify equivalent hFE ranges and power dissipation capabilities. Consult Microchip documentation for qualified alternate part numbers within the same reliability class.