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The JANTX2N6989 is a silicon quad NPN bipolar junction transistor array manufactured by Microchip Technology. It features four independent NPN transistors housed in a TO-116-14 through-hole package. The device supports a maximum collector current of 800 mA and a collector-emitter voltage of 50 V, with a total power dissipation rating of 1.5 W. It operates within an extended temperature range from -65°C to +200°C junction temperature. The component meets the JANTX qualification level under MIL-PRF-19500/559 standards, ensuring suitability for demanding environments.
Verify that the specific order includes the JANTX qualification suffix, as this denotes the required military grade tier. Confirm the package type matches the TO-116-14 footprint requirements for your PCB layout. Ensure the design accounts for the 1.5 W total power dissipation limit across all four internal transistors. Check for any recent manufacturing changes or PCNs issued by Microchip Technology regarding this part number.
Select this component when a quad NPN configuration is required for space-constrained military designs. Compare against standard commercial grades if environmental exposure is limited, as JANTX provides enhanced screening. Verify that the 50 V collector-emitter voltage aligns with the circuit's peak operating conditions. Consider the TO-116-14 lead frame dimensions during mechanical integration planning.
This part belongs to the 2N6989 family of quad NPN transistor arrays produced by Microchip Technology. It shares functional similarities with the JAN2N6989 but offers higher performance tiers associated with the JANTX designation. The series is designed for robust switching applications where multiple identical transistors are needed in a compact form factor.
Direct substitutes include the JAN2N6989 for lower qualification levels. Evaluate the 2N6989 for commercial applications where military standards are not required. Cross-reference pinouts to ensure compatibility with existing TO-116-14 footprints before substitution.