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JANTXV1N5519DUR-1/TR is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ZENER 3.6V 500MW DO213AA. Review the specifications below when checking this part for your BOM.
The JANTXV1N5519DUR-1/TR is a hermetically sealed Zener diode manufactured by Microchip Technology. It features a nominal Zener voltage of 3.6 V with a tight tolerance of ±1%. The device is rated for a maximum power dissipation of 500 mW and operates within an extended temperature range from -65 °C to +175 °C junction temperature. Packaged in the DO-213AA (MELF) surface-mount format, it exhibits a maximum reverse leakage current of 10 nA and a Zener impedance of 150 Ohms at a test current of 250 µA.
Verify the specific suffix UR-1/TR against official Microchip documentation to confirm reel packaging and lead-free status. Ensure the procurement channel provides traceability certificates required for JAN-grade components. Confirm that the received units match the hermetic sealing specifications mandated for this military-grade series before integration into sensitive systems.
Select this component when strict voltage accuracy and environmental resilience are critical. The ±1% tolerance distinguishes it from standard commercial variants. The MELF package offers robustness against mechanical shock compared to axial leads. Verify that the 500 mW power rating aligns with the thermal design of the target application board.
This part belongs to the JAN1N5519 series of radiation-hardened Zener diodes. It utilizes advanced silicon planar technology to withstand ionizing radiation effects common in space applications. The DO-213AA package provides a compact footprint suitable for dense PCB layouts while maintaining high thermal conductivity for efficient heat dissipation during continuous operation.
JAN1N5519DUR-1
The maximum reverse leakage current is specified as 10 nA.
Yes, it is housed in the DO-213AA MELF package designed for surface-mount technology.
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