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The JANTXV2N2920A is a dual NPN small-signal bipolar junction transistor manufactured by Microchip Technology. It features a TO-78-6 metal can package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 60 V and a continuous collector current of 30 mA. Power dissipation is rated at 350 mW, with an extended operating junction temperature range up to +200 °C. This component is classified as a radiation-hardened semiconductor suitable for high-reliability environments.
Verify the specific suffix against official Microchip documentation to confirm exact electrical binning and radiation hardness levels. Ensure procurement channels provide valid chain-of-custody records for radiation-hardened components. Confirm package integrity upon receipt to maintain hermetic seal specifications required for this series.
Select this component when dual NPN functionality is required in a single package with radiation tolerance. Verify that the 60 V collector-emitter rating meets circuit voltage requirements. Consider the TO-78-6 footprint for PCB layout compatibility. Evaluate thermal management needs given the 350 mW dissipation limit in enclosed spaces.
This part belongs to the Microchip JANTXV series of radiation-hardened bipolar transistors. These devices are engineered for defense and space applications where standard commercial parts would fail due to ionizing radiation exposure. The JANTXV designation indicates specific screening and testing protocols beyond standard industrial grades.
Direct replacements must match the radiation-hardened specification and TO-78-6 package. Standard commercial 2N2920 equivalents lack the necessary radiation tolerance and may not fit the hermetic requirement. Consult Microchip for qualified alternate sources within the same hardened family.