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The JANTXV2N2920U/TR is a silicon NPN single bipolar junction transistor manufactured by Microchip Technology. It utilizes a TO-78-6 hermetic package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 60 V and a collector-base voltage of 70 V, with an emitter-base voltage rating of 6 V. Continuous collector current is limited to 30 mA, while power dissipation reaches 350 mW. The component operates within a temperature range of -65°C to +200°C. DC current gain (hFE) ranges from a minimum of 175 to a maximum of 600.
Verify the specific ordering suffix against official Microchip documentation to confirm package type and reel specifications. Ensure that the procurement channel provides traceability certificates required for military or space-grade components. Confirm RoHS status as indicated in manufacturer datasheets prior to finalizing orders.
Select this component when high reliability and radiation hardness are required alongside moderate voltage ratings. Compare the 30 mA current limit and 350 mW dissipation against circuit requirements. Consider the TO-78-6 footprint constraints during PCB layout design for compatible housing integration.
This part belongs to the JANTXV series of qualified bipolar transistors produced by Microchip Technology. The series targets defense and aerospace markets requiring proven silicon technology. It serves as a ruggedized alternative to commercial grade equivalents, maintaining strict parameter controls throughout the manufacturing process.
Consult official Microchip substitution guides for verified equivalent part numbers. Do not assume functional compatibility with generic commercial BJT replacements without verifying pinout and electrical limits.