JANTXV2N3810L

$27.33

Description：TRANS 2PNP 60V 50MA TO-78-6
Series：-

SKU:0ed6dab8bcd3 Category: Bipolar Transistor Arrays Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：TRANS 2PNP 60V 50MA TO-78-6
Series：-
Mfr：Microchip Technology
Package：Bulk
Transistor Type：2 PNP (Dual)
Current - Collector (Ic) (Max)：50mA
Voltage - Collector Emitter Breakdown (Max)：60V
Vce Saturation (Max) @ Ib, Ic：250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)：10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 1mA, 5V
Power - Max：350mW
Frequency - Transition：-
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-78-6 Metal Can
Supplier Device Package：TO-78-6
Grade：Military
Qualification：MIL-PRF-19500/336

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JANTXV2N3810L

Overview

The JANTXV2N3810L is a silicon PNP dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a TO-78-6 metal can package designed for through-hole mounting. The device supports a maximum DC collector current of 50 mA and withstands collector-emitter and collector-base voltages of 60 V each, with an emitter-base voltage rating of 5 V. Power dissipation is rated at 350 mW. The component operates within a temperature range of -65°C to +200°C. DC current gain (hFE) ranges from a minimum of 100 to a maximum of 450 under specified test conditions.

Feature Summary

Hermetically sealed TO-78 metal can construction
Dual PNP configuration in a single package
Qualified to MIL-PRF-19500/336 standards

Applications

General purpose switching applications
Matched dual transistor circuits
Military and aerospace electronic systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm exact screening levels and electrical parameters. Confirm RoHS compliance status as military-grade components often fall outside standard environmental directives. Validate lead times due to potential long production cycles associated with specialized semiconductor manufacturing processes.

Selection Notes

Select this component when a hermetically sealed dual PNP transistor is required for high-reliability environments. Ensure the circuit design accommodates the 350 mW power dissipation limit and the TO-78-6 package footprint. Verify that the 60 V voltage ratings meet the system's peak operating requirements.

Part Context

This part belongs to the 2N3810 series of dual PNP transistors. It shares core specifications with variants such as JANTXV2N3810U but may differ in packaging or screening details. The component is distinct from single-transistor counterparts like the 2N3637 or 2N3499 found in the same product family.