SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The JANTXV2N3810U is a dual PNP small-signal bipolar junction transistor manufactured by Microchip Technology. It features a TO-78-6 metal can package designed for through-hole mounting. The device operates with a maximum collector current of 50mA and a collector-emitter breakdown voltage of 60V. Power dissipation is rated at 350mW, supporting an operating temperature range from -65°C to +200°C junction temperature. The component meets MIL-PRF-19500/336 military qualification standards.
Verify the specific ordering suffix and manufacturer lot codes against the latest datasheet revision before procurement. Confirm that the hermetic seal integrity meets project requirements for extreme thermal cycling. Ensure compliance with export control classifications such as EAR99 during international transactions. Validate that the lead time aligns with production schedules due to specialized manufacturing processes.
Select this component when dual PNP switching or amplification is required in high-reliability environments. Compare electrical characteristics against standard commercial equivalents to ensure adequate margin for extreme temperatures. Verify pinout compatibility with existing PCB footprints utilizing the TO-78-6 metal can format. Consider power dissipation limits under worst-case ambient conditions.
This part belongs to the 2N3810 series of silicon PNP transistors produced by Microchip. It serves as a ruggedized alternative to commercial variants, offering enhanced durability for defense and space applications. The device shares functional similarities with other hermetically sealed dual transistors but maintains distinct military qualification parameters.
JANTXV2N3811L is a documented substitute offering similar dual PNP functionality within the same family.