JANTXV2N3811U

JANTXV2N3811U

$31.09
  • Description:TRANS 2PNP 60V 50MA TO-78-6
  • Series:-

SKU:e1e77f1d9dca Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP 60V 50MA TO-78-6
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):50mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 100µA, 1mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 1mA, 5V
  • Power - Max:350mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-78-6 Metal Can
  • Supplier Device Package:TO-78-6
  • Grade:Military
  • Qualification:MIL-PRF-19500/336

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JANTXV2N3811U

Overview

The JANTXV2N3811U is a dual PNP silicon small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology, formerly Microsemi. Designed for high-reliability applications, this component features a hermetic metal can package to ensure environmental stability. It provides a collector-emitter voltage of 60 V and supports a continuous collector current of 50 mA with a power dissipation rating of 350 mW. The device integrates two independent PNP transistors within a single six-lead TO-77 package, offering a compact solution for signal processing and switching tasks in radiation-hardened systems.

Feature Summary

  • Dual configuration integrating two independent PNP transistors in a single package
  • Hermetically sealed metal can construction for harsh environment reliability
  • Radiation hardening capabilities suitable for aerospace and defense electronics

Applications

  • Aerospace and satellite communication circuits
  • Military-grade signal amplification stages
  • Radiation-tolerant switching logic networks

Procurement Notes

Verify the specific ordering suffix and manufacturer lot traceability before procurement. Confirm that the component meets the required radiation hardness levels for the target mission profile. Ensure compatibility with existing thermal management designs due to the metal can package characteristics. Request updated quality certifications from authorized distributors to guarantee authenticity and compliance with military standards.

Selection Notes

Select this component when a dual PNP configuration is required in a radiation-hardened environment. Compare against single-transistor alternatives if space allows, noting the integration benefit. Verify that the 60 V collector-emitter voltage and 50 mA current ratings exceed the maximum circuit demands. Consider the TO-77 package dimensions for PCB or chassis mounting constraints during the design phase.

Part Context

This part belongs to the 2N3811 series of dual PNP transistors produced under the JANTXV qualification level. The JANTXV designation indicates enhanced screening and testing beyond standard commercial grades, targeting high-reliability sectors. Microchip continues the legacy of Microsemi's radiation-hardened semiconductor portfolio, ensuring long-term availability for critical infrastructure and defense applications requiring proven silicon technology.

Replacement Considerations

Direct replacements include JAN2N3811U for non-vacuum-sealed variants or other JANTXV-series dual PNP transistors with matching electrical parameters. Verify pinout compatibility and package dimensions before substitution. Consult official Microchip documentation for approved cross-reference lists to ensure radiation hardness specifications are maintained.

JANTXV2N3811UJANTXV2N3811U
$31.09
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