JANTXV2N5794U/TR

Overview

The JANTXV2N5794U/TR is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications in harsh environments. The component features an NPN configuration with a maximum collector-emitter voltage of 60 V and a continuous collector current of 100 mA. It operates within a temperature range of -65°C to +175°C and utilizes the UB-3 surface-mount package.

Feature Summary

• Dual NPN transistor configuration for compact circuit integration
• Radiation-hardened construction suitable for space applications
• Extended operating temperature range up to +175°C

Applications

• Spacecraft avionics systems
• Military communication equipment
• High-reliability industrial control circuits

Procurement Notes

Verify the specific suffix 'TR' indicates tape-and-reel packaging when ordering. Confirm radiation hardness levels and lot traceability requirements with the manufacturer prior to procurement, as these are critical for qualified aerospace and defense contracts.

Selection Notes

Select this component for designs requiring dual NPN transistors in a single surface-mount package. Ensure the 60 V collector-emitter voltage rating exceeds the peak circuit voltages. Verify that the UB-3 footprint matches the PCB layout constraints.

Part Context

This part belongs to the JANTXV series of radiation-hardened semiconductors from Microchip. The JANTXV designation typically denotes enhanced screening and reliability standards compared to standard commercial grades, targeting high-reliability sectors.

Replacement Considerations

Direct replacements must match the UB-3 package and dual NPN configuration. Verify pinout compatibility and electrical parameters such as VCEO and IC before substituting with other radiation-hardened dual BJT parts.