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The JANTXV2N5794UC/TR is a dual NPN bipolar junction transistor array manufactured by Microchip Technology. It features electrically isolated matched and unmatched transistors in a surface-mount 6-SMD package. Key electrical parameters include a collector-emitter voltage of 40 V, a continuous collector current of 600 mA, and a power dissipation rating of 600 mW. The device operates within a temperature range of -55°C to +175°C.
Verify the specific suffix UC/TR against official Microchip documentation to confirm package type and tape-and-reel specifications. Ensure procurement channels are authorized to guarantee authenticity and traceability required for radiation-hardened components. Confirm compliance with export control classifications EAR99 before international transactions.
Select this component when dual isolated NPN switching is required in space-constrained surface-mount designs. The high current rating supports moderate load driving. Verify thermal management capabilities for the 600 mW dissipation limit in the intended enclosure. Compare against standard commercial variants if radiation hardness is not a mission requirement.
This part belongs to the JANTX series of radiation-hardened bipolar transistors from Microchip. It provides enhanced reliability compared to commercial equivalents. The dual configuration allows for compact circuit layouts in complex analog or digital switching networks. It complements other JANTX discrete devices for complete system-level hardening.
Direct substitutes include JANTX2N5794UC and JANTXV2N5794U variants. Verify pinout compatibility and electrical parameter margins. Commercial equivalents like 2N5794 lack radiation hardness and may not meet military specifications.